DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc 5Ω bidirectional switches connect inputs to outputs Zero propagation delay, zero ground bounce Unders.

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* Hot-swapping, hot-docking Voltage translation (5V to 3.3V) Power Conservation Capa.

Enhanced N channel FET with no inherent diode to Vcc 5Ω bidirectional switches connect inputs to outputs Zero propagation delay, zero ground bounce Undershoot clamp diodes on all switch and control inputs Available in SOIC, QSOP, and TSSOP packages.

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